| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tube |
| RoHS Status |
|
| Transistor Type |
7 NPN Darlington |
| Current - Collector (Ic) (Max) |
500mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
1.6V @ 500µA, 350mA |
| Current - Collector Cutoff (Max) |
50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 350mA, 2V |
| Power - Max |
1.47W |
| Frequency - Transition |
- |
| Operating Temperature |
-40°C ~ 85°C (TA) |
| Mounting Type |
Through Hole |
| Package / Case |
16-DIP (0.300", 7.62mm) |
| Supplier Device Package |
16-DIP |
| Base Product Number |
ULN2004 |
| Grade |
- |
| Qualification |
- |