Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Vishay Siliconix |
Series |
- |
Packaging |
Tube |
RoHS Status |
RoHS non-compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
90 V |
Current - Continuous Drain (Id) @ 25°C |
860mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
50 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
725mW (Ta), 6.25W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-39 |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Base Product Number |
2N6661 |
Gate Charge (Qg) (Max) @ Vgs |
- |
Grade |
- |
Qualification |
- |