Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Bulk |
RoHS Status |
|
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
160 V |
Vce Saturation (Max) @ Ib, Ic |
1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 200mA, 5V |
Power - Max |
900 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 Long Body |
Supplier Device Package |
TO-92MOD |
Base Product Number |
2SC2383 |
Grade |
- |
Qualification |
- |