| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tube |
| RoHS Status |
|
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
5 A |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Vce Saturation (Max) @ Ib, Ic |
400mV @ 150mA, 3A |
| Current - Collector Cutoff (Max) |
1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1A, 1V |
| Power - Max |
1 W |
| Frequency - Transition |
120MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-251-3 Short Leads, IPAK, TO-251AA |
| Supplier Device Package |
PW-MOLD |
| Base Product Number |
2SC3074 |
| Grade |
- |
| Qualification |
- |