| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Renesas Electronics Corporation |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
10V |
| Frequency - Transition |
9GHz |
| Noise Figure (dB Typ @ f) |
1.2dB @ 1GHz |
| Gain |
13dB |
| Power - Max |
200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 20mA, 8V |
| Current - Collector (Ic) (Max) |
65mA |
| Operating Temperature |
150°C (TJ) |
| Grade |
- |
| Qualification |
- |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT23-3 (TO-236) |
| Base Product Number |
- |