Category | Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Bulk |
RoHS Status | |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3 A |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 75mA, 1.5A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
Power - Max | 900 mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Supplier Device Package | TO-92MOD |
Base Product Number | 2SC4604 |
Grade | - |
Qualification | - |