Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Bulk |
RoHS Status |
|
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
230 V |
Vce Saturation (Max) @ Ib, Ic |
1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 100mA, 5V |
Power - Max |
2 W |
Frequency - Transition |
100MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Supplier Device Package |
TO-220NIS |
Base Product Number |
2SC4793 |
Grade |
- |
Qualification |
- |