Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tube |
RoHS Status |
RoHS Compliant |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
10 A |
Voltage - Collector Emitter Breakdown (Max) |
140 V |
Vce Saturation (Max) @ Ib, Ic |
2V @ 700mA, 7A |
Current - Collector Cutoff (Max) |
5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
55 @ 1A, 5V |
Power - Max |
100 W |
Frequency - Transition |
30MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P(N) |
Base Product Number |
2SC5198 |
Grade |
- |
Qualification |
- |