| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tray |
| RoHS Status |
RoHS Compliant |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
5 A |
| Voltage - Collector Emitter Breakdown (Max) |
800 V |
| Vce Saturation (Max) @ Ib, Ic |
1V @ 400mA, 2A |
| Current - Collector Cutoff (Max) |
100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
10 @ 1mA, 5V |
| Power - Max |
100 W |
| Frequency - Transition |
- |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P(N) |
| Base Product Number |
2SC5354 |
| Grade |
- |
| Qualification |
- |