Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tube |
RoHS Status |
|
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
8 A |
Voltage - Collector Emitter Breakdown (Max) |
450 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 640mA, 3.2A |
Current - Collector Cutoff (Max) |
100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
14 @ 1A, 5V |
Power - Max |
2 W |
Frequency - Transition |
- |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Supplier Device Package |
TO-220NIS |
Base Product Number |
2SC5439 |
Grade |
- |
Qualification |
- |