Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Microsemi Corporation |
Series |
CoolMOS™ |
Packaging |
Tube |
RoHS Status |
|
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
20.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2440 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
208W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D3PAK |
Package / Case |
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
114 nC @ 10 V |
Grade |
- |
Qualification |
- |