Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tube |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
8.4mOhm @ 47A, 10V |
Vgs(th) (Max) @ Id |
4V @ 100µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2290 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
110W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK |
Package / Case |
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
69 nC @ 10 V |
Grade |
- |
Qualification |
- |