Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
NXP Semiconductors |
Series |
- |
Packaging |
Bulk |
RoHS Status |
|
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
500 mA |
Voltage - Collector Emitter Breakdown (Max) |
45 V |
Vce Saturation (Max) @ Ib, Ic |
700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 100mA, 1V |
Power - Max |
250 mW |
Frequency - Transition |
80MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
TO-236AB |
Base Product Number |
- |
Grade |
Automotive |
Qualification |
AEC-Q101 |