Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Diodes Incorporated |
Series |
- |
Packaging |
Bulk |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
120mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.6V, 5V |
Rds On (Max) @ Id, Vgs |
30Ohm @ 100mA, 5V |
Vgs(th) (Max) @ Id |
- |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92 |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Base Product Number |
BS107 |
Gate Charge (Qg) (Max) @ Vgs |
- |
Grade |
- |
Qualification |
- |