Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 2.5V |
Rds On (Max) @ Id, Vgs |
57mOhm @ 2.3A, 2.5V |
Vgs(th) (Max) @ Id |
750mV @ 11µA |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
529 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-SOT23 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Base Product Number |
BSS806 |
Gate Charge (Qg) (Max) @ Vgs |
1.7 nC @ 2.5 V |
Grade |
Automotive |
Qualification |
AEC-Q101 |