| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Renesas Electronics Corporation |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
ROHS3 Compliant |
| Transistor Type |
NPN - Pre-Biased |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
70 V |
| Resistor - Base (R1) |
2.2 kOhms |
| Resistor - Emitter Base (R2) |
10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
500 @ 2A, 5V |
| Vce Saturation (Max) @ Ib, Ic |
- |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| Frequency - Transition |
- |
| Power - Max |
1 W |
| Mounting Type |
Through Hole |
| Package / Case |
3-SSIP |
| Supplier Device Package |
- |
| Base Product Number |
- |
| Grade |
- |
| Qualification |
- |