Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Vishay General Semiconductor - Diodes Division |
Series |
HEXFET® |
Packaging |
Tube |
RoHS Status |
RoHS non-compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
6.5mOhm @ 108A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
10700 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
480W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Supplier Device Package |
SOT-227 |
Package / Case |
SOT-227-4, miniBLOC |
Base Product Number |
FB180 |
Gate Charge (Qg) (Max) @ Vgs |
380 nC @ 10 V |
Grade |
- |
Qualification |
- |