Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
GeneSiC Semiconductor |
Series |
G2R™ |
Packaging |
Tube |
RoHS Status |
RoHS Compliant |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1700 V |
Current - Continuous Drain (Id) @ 25°C |
3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
1.2Ohm @ 2A, 20V |
Vgs(th) (Max) @ Id |
4V @ 2mA |
Vgs (Max) |
+20V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
139 pF @ 1000 V |
FET Feature |
- |
Power Dissipation (Max) |
54W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-7 |
Package / Case |
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
Base Product Number |
G2R1000 |
Gate Charge (Qg) (Max) @ Vgs |
- |
Grade |
- |
Qualification |
- |