Category |
Discrete Semiconductor Products - Diodes - Rectifiers |
Manufacturer |
GeneSiC Semiconductor |
Series |
- |
Packaging |
Tube |
RoHS Status |
RoHS Compliant |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1200 V |
Current - Average Rectified (Io) |
50A |
Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 50 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
1 mA @ 1200 V |
Capacitance @ Vr, F |
2940pF @ 1V, 1MHz |
Mounting Type |
Through Hole |
Package / Case |
TO-247-2 |
Supplier Device Package |
TO-247-2 |
Operating Temperature - Junction |
-55°C ~ 175°C |
Base Product Number |
GB50SLT12 |
Grade |
- |
Qualification |
- |