Category | Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer | Vishay Siliconix |
Series | - |
Packaging | Tube |
RoHS Status | RoHS non-compliant |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Base Product Number | IRFI630 |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
Grade | - |
Qualification | - |