Category | Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer | Infineon Technologies |
Series | HEXFET®, StrongIRFET™ |
Packaging | Tube |
RoHS Status | ROHS3 Compliant |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 3.9mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 100µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 98W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA (DPAK) |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Base Product Number | - |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
Grade | - |
Qualification | - |