Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tube |
RoHS Status |
RoHS non-compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55 V |
Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
13.5mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
1570 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
110W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
IPAK |
Package / Case |
TO-251-3 Short Leads, IPAK, TO-251AA |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
35 nC @ 5 V |
Grade |
- |
Qualification |
- |