Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
IXYS |
Series |
TrenchMV™ |
Packaging |
Tube |
RoHS Status |
|
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
85 V |
Current - Continuous Drain (Id) @ 25°C |
200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
5mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
7600 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
480W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-7 (IXTA) |
Package / Case |
TO-263-7, D2PAK (6 Leads + Tab) |
Base Product Number |
IXTA200 |
Gate Charge (Qg) (Max) @ Vgs |
152 nC @ 10 V |
Grade |
- |
Qualification |
- |