| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Microsemi Corporation |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
200 mA |
| Voltage - Collector Emitter Breakdown (Max) |
60 V |
| Vce Saturation (Max) @ Ib, Ic |
500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) |
10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 10mA, 1V |
| Power - Max |
360 mW |
| Frequency - Transition |
- |
| Operating Temperature |
-65°C ~ 200°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package |
TO-39 (TO-205AD) |
| Base Product Number |
2N3251 |
| Grade |
Military |
| Qualification |
MIL-PRF-19500/323 |