Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
onsemi |
Series |
- |
Packaging |
Tape & Box (TB) |
RoHS Status |
|
Transistor Type |
NPN - Darlington |
Current - Collector (Ic) (Max) |
1.2 A |
Voltage - Collector Emitter Breakdown (Max) |
20 V |
Vce Saturation (Max) @ Ib, Ic |
1V @ 10µA, 10mA |
Current - Collector Cutoff (Max) |
100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20000 @ 10mA, 5V |
Power - Max |
625 mW |
Frequency - Transition |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
MPSA12 |
Grade |
- |
Qualification |
- |