Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
NovuSem |
Series |
NC1M |
Packaging |
Tape & Reel (TR) |
RoHS Status |
RoHS Compliant |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Rds On (Max) @ Id, Vgs |
75mOhm @ 20A, 18V |
Vgs(th) (Max) @ Id |
2.3V @ 5mA |
Vgs (Max) |
+18V, -5V |
Input Capacitance (Ciss) (Max) @ Vds |
1402 pF @ 1000 V |
FET Feature |
- |
Power Dissipation (Max) |
240W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-7L |
Package / Case |
TO-263-8, DPak (7 Leads + Tab) |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
- |
Grade |
- |
Qualification |
- |