Category | Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer | NEC Corporation |
Series | - |
Packaging | Tube |
RoHS Status | ROHS3 Compliant |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
Base Product Number | - |
Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
Grade | Automotive |
Qualification | AEC-Q101 |