| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
PN Junction Semiconductor |
| Series |
P3M |
| Packaging |
Tape & Reel (TR) |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
650 V |
| Current - Continuous Drain (Id) @ 25°C |
44A |
| Drive Voltage (Max Rds On, Min Rds On) |
15V |
| Rds On (Max) @ Id, Vgs |
79mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id |
2.2V @ 20mA (Typ) |
| Vgs (Max) |
+20V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
159W |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK-7 |
| Package / Case |
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number |
- |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Grade |
- |
| Qualification |
- |