Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
NXP Semiconductors |
Series |
- |
Packaging |
Bulk |
RoHS Status |
|
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
150 V |
Vce Saturation (Max) @ Ib, Ic |
350mV @ 200mA, 1A |
Current - Collector Cutoff (Max) |
100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 500mA, 10V |
Power - Max |
300 mW |
Frequency - Transition |
30MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
TO-236AB |
Base Product Number |
- |
Grade |
- |
Qualification |
- |