Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
NXP USA Inc. |
Series |
- |
Packaging |
Tape & Reel (TR) |
RoHS Status |
ROHS3 Compliant |
Transistor Type |
PNP - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
1 kOhms |
Resistor - Emitter Base (R2) |
1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max) |
1µA |
Frequency - Transition |
- |
Power - Max |
250 mW |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SMT3; MPAK |
Base Product Number |
PDTA113 |
Grade |
- |
Qualification |
- |