| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
NXP Semiconductors |
| Series |
- |
| Packaging |
Bulk |
| RoHS Status |
|
| Transistor Type |
1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) |
100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V, 12V |
| Resistor - Base (R1) |
10kOhms |
| Resistor - Emitter Base (R2) |
10kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V / 200 @ 10mA, 2V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) |
1µA |
| Frequency - Transition |
280MHz |
| Power - Max |
300mW |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
SOT-666 |
| Base Product Number |
PEMF21 |
| Grade |
- |
| Qualification |
- |