Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR) |
RoHS Status |
|
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
50 mA |
Voltage - Collector Emitter Breakdown (Max) |
20 V |
Resistor - Base (R1) |
4.7 kOhms |
Resistor - Emitter Base (R2) |
4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
- |
Power - Max |
50 mW |
Mounting Type |
Surface Mount |
Package / Case |
SC-101, SOT-883 |
Supplier Device Package |
CST3 |
Base Product Number |
RN1101 |
Grade |
- |
Qualification |
- |