Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
|
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
22kOhms |
Resistor - Emitter Base (R2) |
47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
200MHz, 250MHz |
Power - Max |
100mW |
Mounting Type |
Surface Mount |
Package / Case |
SOT-563, SOT-666 |
Supplier Device Package |
ES6 |
Base Product Number |
RN4908 |
Grade |
Automotive |
Qualification |
AEC-Q101 |