Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
1.2A (Ta) |
Rds On (Max) @ Id, Vgs |
228mOhm @ 600mA, 2.5V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
7.7nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds |
331pF @ 10V |
Power - Max |
500mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, Flat Leads |
Supplier Device Package |
UF6 |
Base Product Number |
SSM6P54 |
Grade |
- |
Qualification |
- |