Category |
Discrete Semiconductor Products - Diodes - Rectifiers |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
650 V |
Current - Average Rectified (Io) |
12A |
Voltage - Forward (Vf) (Max) @ If |
1.35 V @ 12 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
120 µA @ 650 V |
Capacitance @ Vr, F |
778pF @ 1V, 1MHz |
Mounting Type |
Surface Mount |
Package / Case |
4-VSFN Exposed Pad |
Supplier Device Package |
4-DFN-EP (8x8) |
Operating Temperature - Junction |
175°C |
Base Product Number |
- |
Grade |
- |
Qualification |
- |