Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tube |
RoHS Status |
ROHS3 Compliant |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
12 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
400mV @ 300mA, 6A |
Current - Collector Cutoff (Max) |
5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1A, 1V |
Power - Max |
2 W |
Frequency - Transition |
50MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Supplier Device Package |
TO-220SIS |
Base Product Number |
- |
Grade |
- |
Qualification |
- |