Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
YAGEO XSEMI |
Series |
XP60SL115D |
Packaging |
Tube |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
115mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
5120 pF @ 100 V |
FET Feature |
- |
Power Dissipation (Max) |
2W (Ta), 178W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-262 |
Package / Case |
TO-262-3 Long Leads, I2PAK, TO-262AA |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
145 nC @ 10 V |
Grade |
- |
Qualification |
- |