Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
RoHS Compliant |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
120 V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
350 @ 2mA, 6V |
Power - Max |
150 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
125°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
TO-236 |
Base Product Number |
2SC3324 |
Grade |
- |
Qualification |
- |