Category | Discrete Semiconductor Products - Transistors - Bipolar BJT |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status | RoHS Compliant |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 120 V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 150 mW |
Frequency - Transition | 100MHz |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236 |
Base Product Number | 2SC3324 |
Grade | - |
Qualification | - |