Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Microsemi Corporation |
Series |
- |
Packaging |
Bulk |
RoHS Status |
|
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
55mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Vgs (Max) |
+25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
FET Feature |
- |
Power Dissipation (Max) |
625W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D3PAK |
Package / Case |
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
235 nC @ 20 V |
Grade |
- |
Qualification |
- |