Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tape & Reel (TR) |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
24 V |
Current - Continuous Drain (Id) @ 25°C |
340A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
1.65mOhm @ 195A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
7590 pF @ 24 V |
FET Feature |
- |
Power Dissipation (Max) |
300W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO263-3 |
Package / Case |
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
240 nC @ 10 V |
Grade |
Automotive |
Qualification |
AEC-Q101 |