Category | Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer | International Rectifier |
Series | HEXFET® |
Packaging | Bulk |
RoHS Status | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 345mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id | 5V @ 50µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Base Product Number | - |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Grade | - |
Qualification | - |