Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
International Rectifier |
Series |
HEXFET® |
Packaging |
Bulk |
RoHS Status |
Not applicable |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
3.1mOhm @ 76A, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 100µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
3171 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
99W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO251-3-901 |
Package / Case |
TO-251-3 Short Leads, IPAK, TO-251AA |
Base Product Number |
- |
Gate Charge (Qg) (Max) @ Vgs |
99 nC @ 10 V |
Grade |
Automotive |
Qualification |
AEC-Q101 |