Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tube |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
0.75mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 250µA |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
16488 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
375W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO263-7 |
Package / Case |
TO-263-7, D2PAK (6 Leads + Tab) |
Base Product Number |
AUIRLS8409 |
Gate Charge (Qg) (Max) @ Vgs |
266 nC @ 4.5 V |
Grade |
Automotive |
Qualification |
AEC-Q101 |