| Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
| Manufacturer |
NXP USA Inc. |
| Series |
TrenchMOS™ |
| Packaging |
Tube |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
80 V |
| Current - Continuous Drain (Id) @ 25°C |
120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
| Rds On (Max) @ Id, Vgs |
4.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 1mA |
| Vgs (Max) |
±10V |
| Input Capacitance (Ciss) (Max) @ Vds |
17130 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
349W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
I2PAK |
| Package / Case |
TO-262-3 Long Leads, I2PAK, TO-262AA |
| Base Product Number |
BUK9 |
| Gate Charge (Qg) (Max) @ Vgs |
123 nC @ 5 V |
| Grade |
- |
| Qualification |
- |