| Category |
Discrete Semiconductor Products - Transistors - Bipolar BJT |
| Manufacturer |
Toshiba Semiconductor and Storage |
| Series |
- |
| Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
| RoHS Status |
RoHS Compliant |
| Transistor Type |
1 NPN, 1 PNP |
| Current - Collector (Ic) (Max) |
150mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 2mA, 6V |
| Power - Max |
200mW |
| Frequency - Transition |
120MHz |
| Operating Temperature |
125°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
US6 |
| Base Product Number |
HN1B01 |
| Grade |
- |
| Qualification |
- |