Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
International Rectifier |
Series |
HEXFET® |
Packaging |
Bulk |
RoHS Status |
ROHS3 Compliant |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
25V |
Current - Continuous Drain (Id) @ 25°C |
86A (Tc), 303A (Tc) |
Rds On (Max) @ Id, Vgs |
2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 35µA, 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 4.5V, 53nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1735pF @ 13V, 4765pF @ 13V |
Power - Max |
156W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
32-PowerVFQFN |
Supplier Device Package |
32-PQFN (6x6) |
Base Product Number |
IRFHE4250 |
Grade |
- |
Qualification |
- |