Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
π-MOSVI |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
RoHS Compliant |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4V |
Rds On (Max) @ Id, Vgs |
4Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id |
1.5V @ 100µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
7.8 pF @ 3 V |
FET Feature |
- |
Power Dissipation (Max) |
100mW (Ta) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
CST3 |
Package / Case |
SC-101, SOT-883 |
Base Product Number |
SSM3K15 |
Gate Charge (Qg) (Max) @ Vgs |
- |
Grade |
- |
Qualification |
- |