Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
30V, 20V |
Current - Continuous Drain (Id) @ 25°C |
500mA (Ta) |
Rds On (Max) @ Id, Vgs |
145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V |
Vgs(th) (Max) @ Id |
1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
245pF @ 10V, 218pF @ 10V |
Power - Max |
500mW |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, Flat Leads |
Supplier Device Package |
UF6 |
Base Product Number |
SSM6L12 |
Grade |
- |
Qualification |
- |