Category |
Discrete Semiconductor Products - Transistors - FETs-MOSFETs |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Packaging |
Tape & Reel (TR)-->Cut Tape (CT) |
RoHS Status |
ROHS3 Compliant |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel |
FET Feature |
Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
1.6A (Ta), 1.4A (Ta) |
Rds On (Max) @ Id, Vgs |
122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id |
2.6V @ 1mA, 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V, 2.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 15V, 120pF @ 15V |
Power - Max |
500mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, Flat Leads |
Supplier Device Package |
UF6 |
Base Product Number |
SSM6L40 |
Grade |
- |
Qualification |
- |